(Peer-Reviewed) 30 years of nanoimprint: development, momentum and prospects
Wei-Kuan Lin 林玮冠, L. Jay Guo 郭凌杰
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor 48109 , USA
Opto-Electronic Technology, 2025-07-18
Abstract
2025 marks the 30th anniversary of nanoimprint lithography (NIL). Since its inception in 1995, and through global efforts over the past three decades, nanoimprint has emerged as the primary alternative to extreme ultraviolet (EUV) lithography for deep-nanoscale silicon (Si) electronics.
Numerous semiconductor companies have recognized NIL's manufacturing quality and are actively being evaluated for the production of the most advanced semiconductor devices. Nanoimprinting's potential extends beyond silicon chip fabrication and wafer-scale applications. With its high throughput and 3D patterning capabilities, NIL is becoming a key technology for fabricating emerging devices, such as flat optics and augmented reality glasses.
This review summarizes the key developments and applications of nanoimprint lithography, with a particular focus on the latest industry advancements in nano-Si device manufacturing and nanophotonics applications.
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