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(Peer-Reviewed) A hybrid integrated high-precision tunable semiconductor laser
Yiran Zhu 祝怡然 ¹ ², Botao Fu 付博涛 ², Zhiwei Fang 方致伟 ², Qiyue Hu 胡祺悦 ¹ ², Jianping Yu 于建平 ², Yunpeng Song 宋云鹏 ², Yu Ma 马彧 ³, Min Wang 汪旻 ², Kunpeng Jia 贾琨鹏 ⁴, Zhenda Xie 谢臻达 ⁴, Ya Cheng 程亚 ²
¹ State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
中国 上海 华东师范大学 精密光谱科学与技术国家重点实验室
² The Extreme Optoelectromechanics Laboratory (XXL), School of Physics, East China Normal University, Shanghai 200241, China
中国 上海 华东师范大学物理与电子科学学院 极端光机电实验室
³ State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
中国 上海 中国科学院上海光学精密机械研究所 强场激光物理国家重点实验室 超强激光科学卓越创新中心
⁴ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China
中国 南京 南京大学现代工程与应用科学学院 电子科学与工程学院 固体微结构物理国家重点实验室
Opto-Electronic Advances, 2026-02-12
Abstract

Thin-film lithium niobate has become a promising platform for integrated photonics due to its outstanding electro-optic and nonlinear properties. However, the development of on-chip tunable lasers, which is essential for a plethora of applications ranging from optical communications and sensing to metrology and quantum technology, remains limited. Current solutions fall short in either wavelength tuning range or precision, and frequently relies on complex control strategy.

Here, we demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser, achieving a tuning range of ~51.8 nm, an intrinsic linewidth of ~1.21 MHz, and high tuning precision of ~0.03 nm. Specifically, our external cavity uniquely combines highly reflective Sagnac mirrors and a series of unbalanced interferometers which together offer a spectral response in favor of single-longitudinal-mode narrow-linewidth lasing operation, evidenced by not only experimental demonstration but also insightful theoretical analysis.
A hybrid integrated high-precision tunable semiconductor laser_1
A hybrid integrated high-precision tunable semiconductor laser_2
A hybrid integrated high-precision tunable semiconductor laser_3
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