Abstract

Zero-dimensional (0D) quantum-confined nanomaterials and two-dimensional (2D) semiconductors offer complementary optoelectronic properties-strong broadband absorption with size-tunable bandgaps in the former, and gate-controlled carrier transport with efficient electrostatic control. Their integration yields photodetectors with enhanced responsivity, extended spectral coverage, and tunable photogain compared to single-component devices.

However, performance is critically governed by interfacial properties rather than intrinsic material characteristics alone. This review provides fabrication strategies and interface engineering approaches in 0D/2D systems, emphasizing how interfacial phenomena control charge transfer dynamics, trap-state density, and operational stability. We analyze solution-processed and in-situ growth methods, discuss band alignment, ligand chemistry, and defect passivation effects on photodetection mechanisms, and assess gain-speed trade-offs inherent to these architectures. Key challenges including device variability, environmental degradation and scalability limitations are addressed.

By connecting fabrication choices to interface quality and device performance, this review establishes design principles for advancing 0D/2D hybrid photodetection toward practical imaging, sensing and communication applications.