(Peer-Reviewed) High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications
Fanlu Zhang 张钒璐 ¹, Zhicheng Su 苏志诚 ¹ ², Zhe Li 李哲 ¹, Yi Zhu 朱毅 ¹, Nikita Gagrani ¹, Ziyuan Li 李子园 ¹, Mark Lockrey ³, Li Li 李丽 ⁴, Igor Aharonovich ⁵, Yuerui Lu 卢曰瑞 ⁶, Hark Hoe Tan ¹, Chennupati Jagadish ¹, Lan Fu 傅岚 ¹
¹ Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
² School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
中国 南京 东南大学电子科学与工程学院
³ Microstructural Analysis Unit, University of Technology Sydney, Sydney NSW 2007, Australia
⁴ Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
⁵ ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Sydney NSW 2007, Australia
⁶ School of Engineering, College of Engineering and Computer Science, The Australia National University, Canberra, Canberra ACT 2601, Australia
Abstract
Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems. Here, we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well (QW) nanowire array light emitting diodes (LEDs) with multi-wavelength and high-speed operations.
Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of ~1.35 and ~1.55 μm, respectively, ideal for low-loss optical communications. As a result of simultaneous contributions from both axial and radial QWs, broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of ~17 μW.
A large spectral blueshift is observed with the increase of applied bias, which is ascribed to the band-filling effect based on device simulation, and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range. Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate, leading to QW formation with different emission wavelengths.
Furthermore, high-speed GHz-level modulation and small pixel size LED are demonstrated, showing the promise for ultrafast operation and ultracompact integration. The voltage and pitch size controlled multi-wavelength high-speed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.
Polariton lasing in Mie-resonant perovskite nanocavity
Mikhail A. Masharin, Daria Khmelevskaia, Valeriy I. Kondratiev, Daria I. Markina, Anton D. Utyushev, Dmitriy M. Dolgintsev, Alexey D. Dmitriev, Vanik A. Shahnazaryan, Anatoly P. Pushkarev, Furkan Isik, Ivan V. Iorsh, Ivan A. Shelykh, Hilmi V. Demir, Anton K. Samusev, Sergey V. Makarov
Opto-Electronic Advances
2024-04-25
