Year
Month
(Peer-Reviewed) 31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure
Zengyi Xu 徐增熠 ¹ ⁴, Wenqing Niu 牛文清 ¹, Yu Liu 柳裕 ², Xianhao Lin 林显浩 ¹, Jifan Cai 蔡济帆 ¹, Jianyang Shi 施剑阳 ¹ ³, Xiaolan Wang 王小兰 ², Guangxu Wang 王光绪 ², Jianli Zhang 张建立 ², Fengyi Jiang 江风益 ², Zhixue He 贺志学 ⁴, Shaohua Yu 余少华 ⁴, Chao Shen 沈超 ¹, Junwen Zhang 张俊文 ¹, Nan Chi 迟楠 ¹ ³
¹ Key Laboratory for the Information Science of Electromagnetic Waves (MoE), Department of Communication Science and Engineering, Fudan University, Shanghai 200433, China
中国 上海 复旦大学电磁波信息科学教育部重点实验室
² National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
中国 南昌 南昌大学国家硅基LED工程技术研究中心
³ Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications, and Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology, Shanghai 200433, China
中国 上海 上海低轨卫星通信与应用工程技术研究中心 上海低轨卫星通信技术协同创新中心
⁴ Peng Cheng Laboratory, Shenzhen 518055, China
中国 深圳 鹏城实验室
Abstract

Although the 5G wireless network has made significant advances, it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras. As a result, emerging technologies in higher frequencies including visible light communication (VLC), are becoming a hot topic. In particular, LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing (WDM) technology.

This paper proposes an optimized multi-color LED array chip for high-speed VLC systems. Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency, especially in the “yellow gap” region, and it achieves significant improvement in data rate compared with earlier research. This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model, which provides an explanation of the simulation and experiment results.

In the final test using a laboratory communication system, the data rates of eight channels from short to long wavelength are 3.91 Gb/s, 3.77 Gb/s, 3.67 Gb/s, 4.40 Gb/s, 3.78 Gb/s, 3.18 Gb/s, 4.31 Gb/s, and 4.35 Gb/s (31.38 Gb/s in total), with advanced digital signal processing (DSP) techniques including digital equalization technique and bit-power loading discrete multitone (DMT) modulation format.
31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure_1
31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure_2
31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure_3
31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure_4
  • Photo-driven fin field-effect transistors
  • Jintao Fu, Chongqian Leng, Rui Ma, Changbin Nie, Feiying Sun, Genglin Li, Xingzhan Wei
  • Opto-Electronic Science
  • 2024-05-28
  • Generation of structured light beams with polarization variation along arbitrary spatial trajectories using tri-layer metasurfaces
  • Tong Nan, Huan Zhao, Jinying Guo, Xinke Wang, Hao Tian, Yan Zhang
  • Opto-Electronic Science
  • 2024-05-28
  • Resonantly enhanced second- and third-harmonic generation in dielectric nonlinear metasurfaces
  • Ji Tong Wang, Pavel Tonkaev, Kirill Koshelev, Fangxing Lai, Sergey Kruk, Qinghai Song, Yuri Kivshar, Nicolae C. Panoiu
  • Opto-Electronic Advances
  • 2024-05-15
  • Liquid crystal-integrated metasurfaces for an active photonic platform
  • Dohyun Kang, Hyeonsu Heo, Younghwan Yang, Junhwa Seong, Hongyoon Kim, Joohoon Kim, Junsuk Rho
  • Opto-Electronic Advances
  • 2024-04-25
  • Fast source mask co-optimization method for high-NA EUV lithography
  • Ziqi Li, Lisong Dong, Xu Ma, Yayi Wei
  • Opto-Electronic Advances
  • 2024-04-25
  • Polariton lasing in Mie-resonant perovskite nanocavity
  • Mikhail A. Masharin, Daria Khmelevskaia, Valeriy I. Kondratiev, Daria I. Markina, Anton D. Utyushev, Dmitriy M. Dolgintsev, Alexey D. Dmitriev, Vanik A. Shahnazaryan, Anatoly P. Pushkarev, Furkan Isik, Ivan V. Iorsh, Ivan A. Shelykh, Hilmi V. Demir, Anton K. Samusev, Sergey V. Makarov
  • Opto-Electronic Advances
  • 2024-04-25
  • High-Q resonant Terahertz metasurfaces
  • Manukumara Manjappa, Yuri Kivshar
  • Opto-Electronic Advances
  • 2024-04-25
  • Efficient stochastic parallel gradient descent training for on-chip optical processor
  • Yuanjian Wan, Xudong Liu, Guangze Wu, Min Yang, Guofeng Yan, Yu Zhang, Jian Wang
  • Opto-Electronic Advances
  • 2024-04-25
  • High-intensity spatial-mode steerable frequency up-converter toward on-chip integration
  • Haizhou Huang, Huaixi Chen, Huagang Liu, Zhi Zhang, Xinkai Feng, Jiaying Chen, Hongchun Wu, Jing Deng, Wanguo Liang, Wenxiong Lin
  • Opto-Electronic Science
  • 2024-04-24
  • Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors
  • Jiao Jiao Liu, Xinxin Yang, Qiulei Xu, Ruiguang Chang, Zhenghui Wu, Huaibin Shen
  • Opto-Electronic Science
  • 2024-04-24
  • Ultrafast dynamics of femtosecond laser-induced high spatial frequency periodic structures on silicon surfaces
  • Ruozhong Han, Yuchan Zhang, Qilin Jiang, Long Chen, Kaiqiang Cao, Shian Zhang, Donghai Feng, Zhenrong Sun, Tianqing Jia
  • Opto-Electronic Science
  • 2024-03-22
  • Optical scanning endoscope via a single multimode optical fiber
  • Guangxing Wu, Runze Zhu, Yanqing Lu, Minghui Hong, Fei Xu
  • Opto-Electronic Science
  • 2024-03-22



  • Third-harmonic generation and imaging with resonant Si membrane metasurface                                High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications
    About
    |
    Contact
    |
    Copyright © PubCard