(Peer-Reviewed) A nonchlorinated solvent-processed polymer semiconductor for high-performance ambipolar transistors
Jie Yang 杨杰 ¹ ², Yaqian Jiang 蒋雅倩 ¹, Zhiyuan Zhao 赵志远 ¹, Xueli Yang 杨学礼 ¹, Zheye Zhang 张哲野 ², Jinyang Chen 陈金佯 ¹, Junyu Li ¹, Wei Shi 施薇 ¹, Shuai Wang 王帅 ², Yunlong Guo 郭云龙 ¹, Yunqi Liu 刘云圻 ¹
¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China 中国科学院 化学研究所 北京分子科学国家实验室 有机固体院重点实验室
² School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China 华中科技大学 化学与化工学院
National Science Review, 2021-08-14
Abstract
Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs), and polymer solar cells (PSCs). Although several high-performance ambipolar polymers have been developed, their optoelectronic devices are generally processed from hazardous chlorinated solvents. To achieve the commercial applications of organic FETs (OFETs), the polymers should be processed from nonchlorinated solvents, instead of chlorinated solvents.
However, most of conjugated polymers show poor solubility in nonchlorinated solvents. It is of great importance to develop ambipolar polymers that can be processed from nonchlorinated solvents. Here, we develop a nonchlorinated solvent processed polymer named poly[7-fluoro-N, N′-di(4-decyltetradecyl)-7′-azaisoindigo-6′,6″-(thieno[3,2-b]thiophene-2,5-diyl)-7‴-fluoro-N″, N‴-di(4-decyltetradecyl)-7″-azaisoindigo-6,6‴-([2,2'-bithiophene]-5,5'-diyl)] (PITTI-BT) by designing a monomer with a large molar mass.
The polymer displays good solubility in p-xylene (PX). Well-aligned films of PITTI-BT are achieved by an off-center spin-coating (SC) method. Based on the high-quality films, the OFETs fabricated from PX solution achieve record ambipolar performance with hole and electron mobilities of 3.06 and 2.81 cm2 V−1 s−1, respectively. The combination of nonchlorinated solvents and good alignment process offers an effective and eco-friendly approach to obtain high-performance ambipolar transistors.
High-speed and large-capacity visible light communication for 6G: advances and perspectives
Nan Chi, Zhilan Lu, Fujie Li, Haoyu Zhang, Yunkai Wang, Xinyi Liu, Zhiwu Chen, Zhe Feng, Zhuoran Hu, Zhixue He, Ziwei Li, Chao Shen, Junwen Zhang
Opto-Electronic Technology
2026-03-20
Holotomography-driven learning unlocks in-silico staining of single cells in flow cytometry by avoiding fluorescence co-registration
Daniele Pirone, Giusy Giugliano, Michela Schiavo, Annalaura Montella, Martina Mugnano, Vincenza Cerbone, Maddalena Raia, Giulia Scalia Ivana Kurelac, Diego Luis Medina, Lisa Miccio Mario Capasso, Achille Iolascon, Pasquale Memmolo, Pietro Ferraro
Opto-Electronic Science
2026-02-25
A hybrid integrated high-precision tunable semiconductor laser
Yiran Zhu, Botao Fu, Zhiwei Fang, Qiyue Hu, Jianping Yu, Yunpeng Song, Yu Ma, Min Wang, Kunpeng Jia, Zhenda Xie, Ya Cheng
Opto-Electronic Advances
2026-02-12
Millisecond-level electrically switchable metalens for adaptive rotational depth mapping and diffraction-limited imaging
Yeseul Kim, Jihae Lee, Won-Sik Kim, Hyeonsu Heo, Dongmin Jeon, Beomha Yang, Xiaotong Li, Harit Keawmuang, Shiqi Hu, Young-Ki Kim, Trevon Badloe, Junsuk Rho
Opto-Electronic Advances
2026-02-12