(Peer-Reviewed) Highly sensitive SWCNT-based pyroelectric phototransistors for broadband room temperature infrared detection
Svetlana I. Serebrennikova ¹, Daria S. Kopylova ¹, Yuriy G. Gladush ¹, Sakellaris Mailis ¹, Nikita E. Gordeev ¹, Aliya R. Vildanova ¹, Aleksandr V. Averchenko ¹, Sergey S. Zhukov ², Dmitry V. Krasnikov ¹, Albert G. Nasibulin ¹
¹ Skolkovo Institute of Science and Technology, Nobel 3, Moscow 121205, Russia
² Moscow Institute of Physics and Technology, (National Research University), Institutskiy Per 9, Dolgoprudny, Moscow Region 141701, Russia
Opto-Electronic Advances, 2026-03-15
Abstract
Thermal infrared (IR) detectors represent a crucial technology for various applications, yet achieving high performance without cooling remains challenging. Here, we demonstrate high-performance broadband IR photodetectors by integrating single-walled carbon nanotubes (SWCNTs) with a ferroelectric substrate, leveraging the pyroelectric effect for enhanced photodetection. Using aerosol chemical vapor deposition and capillary transfer techniques, we fabricate sparse SWCNT films on z-cut LiNbO₃ surfaces to create pyroelectrically gated field-effect transistors.
The devices exhibit remarkable responsivity across the IR spectrum, with semiconducting channels achieving maximum relative responsivities reaching nearly 100 %/μW at 1550 nm. Our optimized SWCNT networks demonstrate exceptional specific detectivities of 1.7 × 1010 cm √Hz/W at 1550 nm and 1.4 × 1010 cm √Hz/W at 9.3 μm, surpassing graphene-based alternatives by several orders of magnitude and approaching theoretical limits. These results establish SWCNT-based pyroelectric photodetectors as promising candidates for room-temperature IR detection, eliminating the conventional requirement for cooling.
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