Year
Month
(Peer-Reviewed) Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode
Long Guo 郭龙 ¹ ², Ke Jiang 蒋科 ¹ ², Xiaojuan Sun 孙晓娟 ¹ ², Zihui Zhang ¹ ³, Jianwei Ben 贲建伟 ¹ ², Yuping Jia 贾玉萍 ¹ ², Yong Wang 王永 ¹ ², Dabing Li 黎大兵 ¹ ²
¹ State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
中国 长春 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
中国 北京 中国科学院大学 材料科学与光电子工程中心
³ Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
中国 天津 河北工业大学电子与信息工程学院 天津市电子材料与器件重点实验室
Photonics Research, 2021-09-08
Abstract

AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring, corona discharge monitoring, or biological imaging. With the promotion of application requirements, there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias.

In this work, we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well (MQW) into the depletion region. The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect. Hence, the electrons can go through the detector multiple times, inducing unipolar carrier transport multiplication.

Experimentally, an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved, corresponding to an external quantum efficiency of 226%, indicating the existence of internal current gain. When compared with the device without MQW structure, the gain is estimated to be about 10³ in magnitude. The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode_1
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode_2
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode_3
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode_4
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