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(Peer-Reviewed) Multi-wavelength nanowire micro-LEDs for future high speed optical communication
Ayush Pandey, Zetian Mi 米泽田
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
Opto-Electronic Advances, 2024-03-20
https://doi.org/10.29026/oea.2024.240011
https://www.oejournal.org/article/doi/10.29026/oea.2024.240011
Abstract

The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues.

Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations. Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics.
Multi-wavelength nanowire micro-LEDs for future high speed optical communication_1
Multi-wavelength nanowire micro-LEDs for future high speed optical communication_2
Multi-wavelength nanowire micro-LEDs for future high speed optical communication_3
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