(Peer-Reviewed) Multi-wavelength nanowire micro-LEDs for future high speed optical communication
Ayush Pandey, Zetian Mi 米泽田
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
Opto-Electronic Advances, 2024-03-20
Abstract
The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues.
Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations. Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics.
Polariton lasing in Mie-resonant perovskite nanocavity
Mikhail A. Masharin, Daria Khmelevskaia, Valeriy I. Kondratiev, Daria I. Markina, Anton D. Utyushev, Dmitriy M. Dolgintsev, Alexey D. Dmitriev, Vanik A. Shahnazaryan, Anatoly P. Pushkarev, Furkan Isik, Ivan V. Iorsh, Ivan A. Shelykh, Hilmi V. Demir, Anton K. Samusev, Sergey V. Makarov
Opto-Electronic Advances
2024-04-25
